Transistors

• Voltage (VDS): ±30 V
• Power: 300 mW
• Package: TO92

• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage: 500V
• Gate-Source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 mA
• Case: TO-92
• ROHS: Yes

Files:

• Datasheet

• Type: IRF740
• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage: 400 V
• Gate-Source Breakdown Voltage: 20 V
• Continuous Drain Current: 10 A
• Case: TO-220-3
• ROHS: Yes

• Type: IRFBC40PBF
• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage: 600V
• Gate-Source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.2 A
• Case: TO-220AB
• ROHS: Yes

Files:

• Datasheet

Bipolar Transistor NPN

•  NPN
• U_CEO =  45 V
• I_C = 0,1 A
• P_tot = 500 mW
• f_T = 100 MHz
• h_fe = 200...450
• TO92